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Matsunaga, Toshiyuki, Kojima, Rie, Yamada, Noboru, Fujita, Tomoko, Kifune, Kouichi, Kubota, Yoshiki, Takata, Masaki (2010) Structural investigation of GeSb6Te10and GeBi6Te10intermetallic compounds in the chalcogenide homologous series. Acta Crystallographica Section B Structural Science, 66 (4) 407-411 doi:10.1107/s0108768110024080

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Reference TypeJournal (article/letter/editorial)
TitleStructural investigation of GeSb6Te10and GeBi6Te10intermetallic compounds in the chalcogenide homologous series
JournalActa Crystallographica Section B Structural Science
AuthorsMatsunaga, ToshiyukiAuthor
Kojima, RieAuthor
Yamada, NoboruAuthor
Fujita, TomokoAuthor
Kifune, KouichiAuthor
Kubota, YoshikiAuthor
Takata, MasakiAuthor
Year2010 (August 1)Volume66
Issue4
PublisherInternational Union of Crystallography (IUCr)
DOIdoi:10.1107/s0108768110024080Search in ResearchGate
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Mindat Ref. ID187494Long-form Identifiermindat:1:5:187494:9
GUID0
Full ReferenceMatsunaga, Toshiyuki, Kojima, Rie, Yamada, Noboru, Fujita, Tomoko, Kifune, Kouichi, Kubota, Yoshiki, Takata, Masaki (2010) Structural investigation of GeSb6Te10and GeBi6Te10intermetallic compounds in the chalcogenide homologous series. Acta Crystallographica Section B Structural Science, 66 (4) 407-411 doi:10.1107/s0108768110024080
Plain TextMatsunaga, Toshiyuki, Kojima, Rie, Yamada, Noboru, Fujita, Tomoko, Kifune, Kouichi, Kubota, Yoshiki, Takata, Masaki (2010) Structural investigation of GeSb6Te10and GeBi6Te10intermetallic compounds in the chalcogenide homologous series. Acta Crystallographica Section B Structural Science, 66 (4) 407-411 doi:10.1107/s0108768110024080
In(2010, August) Acta Crystallographica Section B Structural Science Vol. 66 (4) International Union of Crystallography (IUCr)
Abstract/NotesThe crystal structures of GeSb6Te10and GeBi6Te10were scrutinized using an X-ray powder diffraction method, which revealed that these compounds crystallize in trigonally distorted cubic close-packed structures with a 51-layer period (R\bar 3m). Each layer consists of a triangular atomic net; Te atoms occupy their own specific layers, whereas Ge, Sb and Bi atoms are located in the other layers. In these pseudobinary compounds, random atomic occupations of Ge and Sb/Bi are observed and the layers form two kinds of elemental structural blocks by their successive stacking along thecaxis. These compounds can be presumed to be isostructural. It is known that the chemical formula of the chalcogenide compounds with the homologous structures found in these pseudobinary systems can be written as (GeTe)n(Sb2Te3)mor (GeTe)n(Bi2Te3)m(n,m: integer); the GeSb6Te10and GeBi6Te10investigated in this study, which correspond to the case in whichn= 1 andm= 3, naturally have 3 × l= 51-layer structures according to a formation rulel= 2n+ 5mcommonly found in the compounds of these chalcogenide systems (lrepresents the number of layers in the basic structural unit). Calculations based on the density functional theory revealed that these materials are compound semiconductors with very narrow band gaps.


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