登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Satpathy, Sashi, Martin, Richard M. (1989) Energetics and valence-band offset of theCaF2/Si insulator-on-semiconductor interface. Physical Review B, 39 (12) 8494-8498 doi:10.1103/physrevb.39.8494

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEnergetics and valence-band offset of theCaF2/Si insulator-on-semiconductor interface
JournalPhysical Review B
AuthorsSatpathy, SashiAuthor
Martin, Richard M.Author
Year1989 (April 15)Volume39
Issue12
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.39.8494Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101625Long-form Identifiermindat:1:5:14101625:4
GUID0
Full ReferenceSatpathy, Sashi, Martin, Richard M. (1989) Energetics and valence-band offset of theCaF2/Si insulator-on-semiconductor interface. Physical Review B, 39 (12) 8494-8498 doi:10.1103/physrevb.39.8494
Plain TextSatpathy, Sashi, Martin, Richard M. (1989) Energetics and valence-band offset of theCaF2/Si insulator-on-semiconductor interface. Physical Review B, 39 (12) 8494-8498 doi:10.1103/physrevb.39.8494
In(1989, April) Physical Review B Vol. 39 (12) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Salehpour, M. R., Satpathy, S., Das, G. P. (1991) Electronic structure of theCaF2/Si(111) interface. Physical Review B, 44 (16) 8880-8885 doi:10.1103/physrevb.44.8880
Satpathy, Sashi, Martin, Richard M., Van de Walle, Chris G. (1988) Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices. Physical Review B, 38 (18) 13237-13245 doi:10.1103/physrevb.38.13237
Satpathy, Sashi, Martin, Richard M. (1987) Electronic structure of the superconducting oxide spinel LiTi2O4. Physical Review B, 36 (13) 7269-7272 doi:10.1103/physrevb.36.7269
Nath, K., Anderson, Alfred B. (1988) Bonding at theCaF2/Si(111) interface from tight-binding cluster and band theory. Physical Review B, 38 (12) 8264-8268 doi:10.1103/physrevb.38.8264
Tuttle, B. R. (2004) Theoretical investigation of the valence-band offset between Si(001) andSiO2. Physical Review B, 70 (12) doi:10.1103/physrevb.70.125322
Hirose, K., Sakano, K., Nohira, H., Hattori, T. (2001) Valence-band offset variation induced by the interface dipole at theSiO2/Si(111)interface. Physical Review B, 64 (15) doi:10.1103/physrevb.64.155325
Massidda, S., Min, B. I., Freeman, A. J. (1987) Interface phenomena at semiconductor heterojunctions: Local-density valence-band offset in GaAs/AlAs. Physical Review B, 35 (18) 9871-9874 doi:10.1103/physrevb.35.9871
Sugawara, Mitsuru (1993) Tight-binding model including cationdorbitals to predict valence-band offset in zinc-blende semiconductor heterojunctions. Physical Review B, 47 (12) 7588-7590 doi:10.1103/physrevb.47.7588
Mishra, Subodha, Thulasi, Sunita, Satpathy, Sashi (2005) Spin polarization via electron tunneling through an indirect-gap semiconductor barrier. Physical Review B, 72 (19) doi:10.1103/physrevb.72.195347
Satpathy, Sashi (1986) Electron energy bands and cohesive properties of CsCl, CsBr, and CsI. Physical Review B, 33 (12) 8706-8715 doi:10.1103/physrevb.33.8706
Xu, F., Vos, M., Weaver, J. H. (1989) Influence of Au overlayers on valence-band offsets for buriedCaF2/Si(111) interfaces. Physical Review B, 39 (11) 8008-8011 doi:10.1103/physrevb.39.8008
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 08:27:15
Go to top of page