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Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses. Physical Review B, 38 (8) 5668-5676 doi:10.1103/physrevb.38.5668

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Reference TypeJournal (article/letter/editorial)
TitleImperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses
JournalPhysical Review B
AuthorsWatanabe, YuichiAuthor
Kawazoe, HiroshiAuthor
Yamane, MasayukiAuthor
Year1988 (September 15)Volume38
Issue8
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.38.5668Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14101061Long-form Identifiermindat:1:5:14101061:0
GUID0
Full ReferenceWatanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses. Physical Review B, 38 (8) 5668-5676 doi:10.1103/physrevb.38.5668
Plain TextWatanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses. Physical Review B, 38 (8) 5668-5676 doi:10.1103/physrevb.38.5668
In(1988, September) Physical Review B Vol. 38 (8) American Physical Society (APS)

See Also

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Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1990) Erratum: Imperfections in amorphous chalcogenides. II. Detection and structure determination of neutral defects in As-S, Ge-S, and Ge-As-S glasses. Physical Review B, 41 (17) 12284 doi:10.1103/physrevb.41.12284
Kawazoe, H., Yanagita, H., Watanabe, Y., Yamane, M. (1988) Imperfections in amorphous chalcogenides. I. Electrically neutral defects in liquid sulfur and arsenic sulfides. Physical Review B, 38 (8) 5661-5667 doi:10.1103/physrevb.38.5661
Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1988) Imperfections in amorphous chalcogenides. III. Interacting-lone-pair model for localized gap states based on a tight-binding energy-band calculation forAs2S3. Physical Review B, 38 (8) 5677-5683 doi:10.1103/physrevb.38.5677
Watanabe, Yuichi, Kaneko, Shuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1989) Imperfections in amorphous chalcogenides. IV. A model of electrical conduction processes in amorphous and crystallineIn2Se3. Physical Review B, 40 (5) 3133-3142 doi:10.1103/physrevb.40.3133
Kawazoe, H., Watanabe, Y., Yamane, M. (1987) Defects in 1- and a-chalcogenides 1. Electrically neutral dangling bonds in 1-S, AsS and AsGeS. Journal of Non-Crystalline Solids, 97. 1255-1258 doi:10.1016/0022-3093(87)90300-0
Sen, S., Ponader, C. W., Aitken, B. G. (2001) Ge and As x-ray absorption fine structure spectroscopic study of homopolar bonding, chemical order, and topology in Ge-As-S chalcogenide glasses. Physical Review B, 64 (10) doi:10.1103/physrevb.64.104202
Sen, S., Aitken, B. G. (2002) Atomic structure and chemical order in Ge-As selenide and sulfoselenide glasses: An x-ray absorption fine structure spectroscopic study. Physical Review B, 66 (13) doi:10.1103/physrevb.66.134204
Watanabe, Yuichi, Kawazoe, Hiroshi, Yamane, Masayuki (1987) Electronic structures and gap states in amorphous chalcogenide semiconductors. Journal of Non-Crystalline Solids, 95. 365-372 doi:10.1016/s0022-3093(87)80132-1
Maley, N., Beeman, D., Lannin, J. S. (1988) Dynamics of tetrahedral networks: Amorphous Si and Ge. Physical Review B, 38 (15) 10611-10622 doi:10.1103/physrevb.38.10611
Tsay, Y. F., Paul, D. K., Mitra, S. S. (1973) Electronic Structure and Optical Properties of Amorphous Ge and Si. Physical Review B, 8 (6) 2827-2832 doi:10.1103/physrevb.8.2827
Hafner, J., Jaswal, S. S. (1988) Atomic and electronic structure of crystalline and amorphous alloys. II. Strong electronic bonding effects in Ca-Al compounds. Physical Review B, 38 (11) 7320-7332 doi:10.1103/physrevb.38.7320
 
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