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Sanorpim, S., Nakajima, F., Katayama, R., Onabe, Kentaro (2007) MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission. Advanced Materials Research, 31. 218-220 doi:10.4028/www.scientific.net/amr.31.218

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Reference TypeJournal (article/letter/editorial)
TitleMOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission
JournalAdvanced Materials Research
AuthorsSanorpim, S.Author
Nakajima, F.Author
Katayama, R.Author
Onabe, KentaroAuthor
Year2007 (November)Volume31
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/amr.31.218Search in ResearchGate
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Mindat Ref. ID11620522Long-form Identifiermindat:1:5:11620522:5
GUID0
Full ReferenceSanorpim, S., Nakajima, F., Katayama, R., Onabe, Kentaro (2007) MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission. Advanced Materials Research, 31. 218-220 doi:10.4028/www.scientific.net/amr.31.218
Plain TextSanorpim, S., Nakajima, F., Katayama, R., Onabe, Kentaro (2007) MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission. Advanced Materials Research, 31. 218-220 doi:10.4028/www.scientific.net/amr.31.218
In(n.d.) Advanced Materials Research Vol. 31. Trans Tech Publications, Ltd.

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Klangtakai, P., Sanorpim, S., Kuboya, S., Katayama, R., Onabe, Kentaro (2008) Effect of Substrate-Surface Orientation on the N Incorporation in GaAsN Films on GaAs Grown by MOVPE. Advanced Materials Research, 55. 825-828 doi:10.4028/www.scientific.net/amr.55-57.825
Sanorpim, S., Kaewket, D., Tungasmita, Sukkaneste, Katayama, R., Onabe, Kentaro (2007) Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE. Advanced Materials Research, 31. 224-226 doi:10.4028/www.scientific.net/amr.31.224
Nakajima, F., Sanorpim, S., Ono, W., Katayama, R., Onabe, K. (2006) MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations. physica status solidi (a), 203 (7). 1641-1644 doi:10.1002/pssa.200565398
Ono, W., Nakajima, F., Sanorpim, S., Katayama, R., Onabe, K. (2007) Substrate-surface orientation dependence of N content in MOVPE growth of GaAsN films on GaAs. Journal of Crystal Growth, 298. 135-139 doi:10.1016/j.jcrysgro.2006.10.007
Sanorpim, S., Kongjaeng, P., Katayama, R., Onabe, Kentaro (2007) A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate. Advanced Materials Research, 31. 221-223 doi:10.4028/www.scientific.net/amr.31.221
Kuntharin, S., Sanorpim, S., Nakamura, T., Katayama, R., Onabe, Kentaro (2007) Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions. Advanced Materials Research, 31. 215-217 doi:10.4028/www.scientific.net/amr.31.215
Kaewket, D., Sanorpim, S., Tungasmita, Sukkaneste, Katayama, R., Onabe, Kentaro (2008) InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE. Advanced Materials Research, 55. 821-824 doi:10.4028/www.scientific.net/amr.55-57.821
Klangtakai, Pawinee, Sanorpim, Sakuntam, Yoodee, Kajornyod, Ono, Wataru, Nakajima, Fumio, Katayama, Ryuji, Onabe, Kentaro (2007) Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation. Journal of Crystal Growth, 298. 140-144 doi:10.1016/j.jcrysgro.2006.10.111
Panpech, P., Vijarnwannaluk, S., Sanorpim, S., Ono, W., Nakajima, F., Katayama, R., Onabe, K. (2007) Correlation between Raman intensity of the N-related local vibrational mode and N content in GaAsN strained layers grown by MOVPE. Journal of Crystal Growth, 298. 107-110 doi:10.1016/j.jcrysgro.2006.10.009
Sanorpim, Sakuntam, Nakajima, Fumihiro, Nakadan, Nobuhiro, Kimura, Tokuharu, Katayama, Ryuji, Onabe, Kentaro (2005) MOVPE growth and optical investigations of InGaPN alloys. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.085
Sanorpim, S., Panpech, P., Vijarnwannaluk, S., Nakajima, F., Kuboya, S., Katayama, R., Onabe, K. (2008) Incorporation of N in high N-content GaAsN films investigated by Raman scattering. physica status solidi (c), 5 (9). 2923-2925 doi:10.1002/pssc.200779271
 
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