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Xie, Chao, Yan, Feng (2017) Perovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region. ACS Applied Materials & Interfaces, 9. 1569-1576 doi:10.1021/acsami.6b11631

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Reference TypeJournal (article/letter/editorial)
TitlePerovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region
JournalACS Applied Materials & Interfaces
AuthorsXie, ChaoAuthor
Yan, FengAuthor
Year2017 (January 18)Volume9
PublisherAmerican Chemical Society (ACS)
DOIdoi:10.1021/acsami.6b11631Search in ResearchGate
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Mindat Ref. ID10828490Long-form Identifiermindat:1:5:10828490:0
GUID0
Full ReferenceXie, Chao, Yan, Feng (2017) Perovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region. ACS Applied Materials & Interfaces, 9. 1569-1576 doi:10.1021/acsami.6b11631
Plain TextXie, Chao, Yan, Feng (2017) Perovskite/Poly(3-hexylthiophene)/Graphene Multiheterojunction Phototransistors with Ultrahigh Gain in Broadband Wavelength Region. ACS Applied Materials & Interfaces, 9. 1569-1576 doi:10.1021/acsami.6b11631
In(2017) ACS Applied Materials & Interfaces Vol. 9. American Chemical Society (ACS)

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