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Pantelides, Sokrates T. (1978) The electronic structure of impurities and other point defects in semiconductors. Reviews of Modern Physics, 50 (4). 797-858 doi:10.1103/revmodphys.50.797

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Reference TypeJournal (article/letter/editorial)
TitleThe electronic structure of impurities and other point defects in semiconductors
JournalReviews of Modern Physics
AuthorsPantelides, Sokrates T.Author
Year1978 (October 1)Volume50
Issue4
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/revmodphys.50.797Search in ResearchGate
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Mindat Ref. ID10694778Long-form Identifiermindat:1:5:10694778:4
GUID0
Full ReferencePantelides, Sokrates T. (1978) The electronic structure of impurities and other point defects in semiconductors. Reviews of Modern Physics, 50 (4). 797-858 doi:10.1103/revmodphys.50.797
Plain TextPantelides, Sokrates T. (1978) The electronic structure of impurities and other point defects in semiconductors. Reviews of Modern Physics, 50 (4). 797-858 doi:10.1103/revmodphys.50.797
In(1978, October) Reviews of Modern Physics Vol. 50 (4) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Bernholc, J., Lipari, Nunzio O., Pantelides, Sokrates T. (1978) Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in Silicon. Physical Review Letters, 41 (13). 895-899 doi:10.1103/physrevlett.41.895
Wu, Yu-Ning, Zhang, X.-G., Pantelides, Sokrates T. (2017) Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors. Physical Review Letters, 119 (10). doi:10.1103/physrevlett.119.105501
Bernholc, J., Pantelides, Sokrates T. (1978) Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs. Physical Review B, 18 (4) 1780-1789 doi:10.1103/physrevb.18.1780
Pollmann, J., Pantelides, Sokrates T. (1978) Scattering-theoretic approach to the electronic structure of semiconductor surfaces: The (100) surface of tetrahedral semiconductors and SiO2. Physical Review B, 18 (10) 5524-5544 doi:10.1103/physrevb.18.5524
Chattopadhyay, D., Queisser, H. J. (1981) Electron scattering by ionized impurities in semiconductors. Reviews of Modern Physics, 53 (4). 745-768 doi:10.1103/revmodphys.53.745
Pantelides, Sokrates T. (1975) Lattice-relaxation effects at point imperfections in semiconductors. Physical Review B, 12 (6) 2543-2546 doi:10.1103/physrevb.12.2543
Gitterman, Moshe (1978) Hydrodynamics of fluids near a critical point. Reviews of Modern Physics, 50 (1). 85-106 doi:10.1103/revmodphys.50.85
Hamilton, Bruce, Peaker, Anthony R., Pantelides, Sokrates T. (1988) Entropy-Driven Metastabilities in Defects in Semiconductors. Physical Review Letters, 61 (14). 1627-1630 doi:10.1103/physrevlett.61.1627
Bahcall, John N. (1978) Solar neutrino experiments. Reviews of Modern Physics, 50 (4). 881-903 doi:10.1103/revmodphys.50.881
Slater, J. C. (1934) The Electronic Structure of Metals. Reviews of Modern Physics, 6 (4). 209-280 doi:10.1103/revmodphys.6.209
Mott, Sir Nevill (1978) Electrons in glass. Reviews of Modern Physics, 50 (2). 203-208 doi:10.1103/revmodphys.50.203
 
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