(1962) Effect of high surface recombination velocity on transistor gain. British Journal of Applied Physics, 13 (1) 44 doi:10.1088/0508-3443/13/1/118
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Effect of high surface recombination velocity on transistor gain | ||
| Journal | British Journal of Applied Physics | ||
| Year | 1962 (January) | Volume | 13 |
| Issue | 1 | ||
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/0508-3443/13/1/118Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 10691194 | Long-form Identifier | mindat:1:5:10691194:5 |
| GUID | 0 | ||
| Full Reference | (1962) Effect of high surface recombination velocity on transistor gain. British Journal of Applied Physics, 13 (1) 44 doi:10.1088/0508-3443/13/1/118 | ||
| Plain Text | (1962) Effect of high surface recombination velocity on transistor gain. British Journal of Applied Physics, 13 (1) 44 doi:10.1088/0508-3443/13/1/118 | ||
| In | (1962, January) British Journal of Applied Physics Vol. 13 (1) IOP Publishing | ||
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