| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | Optimization of RF sputtering process parameters on electrical resistivity, deposition rate and sensitivity of Al-doped ZnO thin films grown on Si substrate using grey-Taguchi technique |
|---|
| Journal | Bulletin of Materials Science |
|---|
| Authors | Vanmathi, M | Author |
|---|
| Ismail, M Mohamed | Author |
| Kumar, M Senthil | Author |
| Year | 2019 (June) | Volume | 42 |
|---|
| Publisher | Springer Science and Business Media LLC |
|---|
| DOI | doi:10.1007/s12034-019-1800-xSearch in ResearchGate |
|---|
| Generate Citation Formats |
| Mindat Ref. ID | 10416618 | Long-form Identifier | mindat:1:5:10416618:7 |
|---|
|
| GUID | 0 |
|---|
| Full Reference | Vanmathi, M, Ismail, M Mohamed, Kumar, M Senthil (2019) Optimization of RF sputtering process parameters on electrical resistivity, deposition rate and sensitivity of Al-doped ZnO thin films grown on Si substrate using grey-Taguchi technique. Bulletin of Materials Science, 42. doi:10.1007/s12034-019-1800-x |
|---|
| Plain Text | Vanmathi, M, Ismail, M Mohamed, Kumar, M Senthil (2019) Optimization of RF sputtering process parameters on electrical resistivity, deposition rate and sensitivity of Al-doped ZnO thin films grown on Si substrate using grey-Taguchi technique. Bulletin of Materials Science, 42. doi:10.1007/s12034-019-1800-x |
|---|
| In | (2019) Bulletin of Materials Science Vol. 42. Springer Science and Business Media LLC |
|---|
These are possibly similar items as determined by title/reference text matching only.