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Potbhare, Siddharth, Goldsman, Neil, Akturk, Akin, Lelis, Aivars J., Green, Ronald (2009) Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs. Materials Science Forum, 615. 805-808 doi:10.4028/www.scientific.net/msf.615-617.805

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of On and Off State Characteristics of 4H-SiC DMOSFETs
JournalMaterials Science Forum
AuthorsPotbhare, SiddharthAuthor
Goldsman, NeilAuthor
Akturk, AkinAuthor
Lelis, Aivars J.Author
Green, RonaldAuthor
Year2009 (March)Volume615
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/msf.615-617.805Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9868536Long-form Identifiermindat:1:5:9868536:1
GUID0
Full ReferencePotbhare, Siddharth, Goldsman, Neil, Akturk, Akin, Lelis, Aivars J., Green, Ronald (2009) Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs. Materials Science Forum, 615. 805-808 doi:10.4028/www.scientific.net/msf.615-617.805
Plain TextPotbhare, Siddharth, Goldsman, Neil, Akturk, Akin, Lelis, Aivars J., Green, Ronald (2009) Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs. Materials Science Forum, 615. 805-808 doi:10.4028/www.scientific.net/msf.615-617.805
In(2009) Materials Science Forum Vol. 615. Trans Tech Publications, Ltd.

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Potbhare, Siddharth, Goldsman, Neil, Akturk, Akin, Lelis, Aivars J. (2010) Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter. Materials Science Forum, 645. 1163-1166 doi:10.4028/www.scientific.net/msf.645-648.1163
Salemi, Shahrzad, Akturk, Akin, Potbhare, Siddharth, Lelis, Aivars J., Goldsman, Neil (2012) Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation. Materials Science Forum, 717. 457-460 doi:10.4028/www.scientific.net/msf.717-720.457
Potbhare, Siddharth, Akturk, Akin, Goldsman, Neil, Lelis, Aivars J., Dhar, Sarit, Agarwal, Anant K. (2010) Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs. Materials Science Forum, 645. 975-978 doi:10.4028/www.scientific.net/msf.645-648.975
Habersat, Daniel B., Lelis, Aivars J., Potbhare, Siddharth, Goldsman, Neil (2009) Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge. Materials Science Forum, 615. 769-772 doi:10.4028/www.scientific.net/msf.615-617.769
Salemi, Shahrzad, Akturk, Akin, Potbhare, Siddharth, Lelis, Aivars J., Goldsman, Neil (2012) Silicon Carbide-Silicon Dioxide Transition Layer Mobility. Materials Science Forum, 717. 449-452 doi:10.4028/www.scientific.net/msf.717-720.449
Lelis, Aivars J., Habersat, Daniel B., Green, Ronald, Goldsman, Neil (2009) Implications of Threshold-Voltage Instability on SiC DMOSFET Operation. Materials Science Forum, 615. 809-812 doi:10.4028/www.scientific.net/msf.615-617.809
Akturk, Akin, Goldsman, Neil, Potbhare, Siddharth, Lelis, Aivars (2009) High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation. Journal of Applied Physics, 105 (3). 33703pp. doi:10.1063/1.3074107
Pennington, Gary, Potbhare, Siddharth, Goldsman, Neil, Habersat, Daniel B., Lelis, Aivars J., McGarrity, J.M., Ashman, C.R. (2007) Investigation of Drain Current Saturation in 4H-SiC MOSFETs. Materials Science Forum, 556. 811-814 doi:10.4028/www.scientific.net/msf.556-557.811
Ettisserry, D.P., Goldsman, Neil, Akturk, Akin, Lelis, Aivars J. (2016) Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study. Materials Science Forum, 858. 465-468 doi:10.4028/www.scientific.net/msf.858.465
Potbhare, Siddharth, Goldsman, Neil, Pennington, Gary, Lelis, Aivars J., McGarrity, J.M. (2007) Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs. Materials Science Forum, 556. 847-850 doi:10.4028/www.scientific.net/msf.556-557.847
Pennington, Gary, Potbhare, Siddharth, Goldsman, Neil, Habersat, Daniel B., Lelis, Aivars J. (2006) Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2. Materials Science Forum, 527. 1055-1058 doi:10.4028/www.scientific.net/msf.527-529.1055
 
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