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Manghi, F, Molinari, E, Bertoni, C M, Calandra, C (1982) Self-consistent pseudopotential calculation of the electronic properties of the InP (110) surface. Journal of Physics C: Solid State Physics, 15 (5). 1099-1109 doi:10.1088/0022-3719/15/5/027

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Reference TypeJournal (article/letter/editorial)
TitleSelf-consistent pseudopotential calculation of the electronic properties of the InP (110) surface
JournalJournal of Physics C: Solid State Physics
AuthorsManghi, FAuthor
Molinari, EAuthor
Bertoni, C MAuthor
Calandra, CAuthor
Year1982 (February 20)Volume15
Issue5
PublisherIOP Publishing
DOIdoi:10.1088/0022-3719/15/5/027Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8895331Long-form Identifiermindat:1:5:8895331:5
GUID0
Full ReferenceManghi, F, Molinari, E, Bertoni, C M, Calandra, C (1982) Self-consistent pseudopotential calculation of the electronic properties of the InP (110) surface. Journal of Physics C: Solid State Physics, 15 (5). 1099-1109 doi:10.1088/0022-3719/15/5/027
Plain TextManghi, F, Molinari, E, Bertoni, C M, Calandra, C (1982) Self-consistent pseudopotential calculation of the electronic properties of the InP (110) surface. Journal of Physics C: Solid State Physics, 15 (5). 1099-1109 doi:10.1088/0022-3719/15/5/027
In(1982, February) Journal of Physics C: Solid State Physics Vol. 15 (5) IOP Publishing

See Also

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Manghi, F, Molinari, E (1982) Aspects of self-consistent procedures in surface pseudopotential calculations. Journal of Physics C: Solid State Physics, 15 (16). 3627-3637 doi:10.1088/0022-3719/15/16/019
Calandra, C, Manghi, F, Bertoni, C M (1977) Electronic structure and atomic configuration at the cleavage surface of zincblende compounds. Journal of Physics C: Solid State Physics, 10 (11). 1911-1927 doi:10.1088/0022-3719/10/11/026
Srivastava, G P (1982) Self-consistent pseudopotential calculations for the electronic structure of bulk and (111) surface of α-Sn. Journal of Physics C: Solid State Physics, 15 (4). 699-706 doi:10.1088/0022-3719/15/4/016
Srivastava, G P (1982) Self-consistent pseudopotential calculations of the equilibrium bulk properties of diamond-type semiconductors. Journal of Physics C: Solid State Physics, 15 (23). doi:10.1088/0022-3719/15/23/003
Jaros, M (1972) Many-band pseudopotential calculation of photoionization of zinc in silicon. Journal of Physics C: Solid State Physics, 5 (15). 1985-1990 doi:10.1088/0022-3719/5/15/013
Srivastava, G P (1982) Electronic structure and total energy of Si, Ge and α-Sn by the self-consistent local pseudopotential method. Journal of Physics C: Solid State Physics, 15 (4). 707-719 doi:10.1088/0022-3719/15/4/017
Calandra, C, Bortolani, V, Bertoni, C M, Tosatti, E (1972) Dielectric matrix and covalent charge distribution of silicon. Journal of Physics C: Solid State Physics, 5 (22). doi:10.1088/0022-3719/5/22/002
Manghi, F., Calandra, C., Bertoni, C.M., Molinari, E. (1984) Electronic properties of the CsGaAs(110) interface at monolayer coverage. Surface Science Letters, 136 (2). doi:10.1016/0167-2584(84)90923-x
Manghi, F., Bertoni, C. M., Calandra, C., Molinari, E. (1981) Theoretical study of the electronic structure of GaP(110) Physical Review B, 24 (10) 6029-6042 doi:10.1103/physrevb.24.6029
Brezini, A (1982) Self-consistent study of localisation near the band edge. Journal of Physics C: Solid State Physics, 15 (8). doi:10.1088/0022-3719/15/8/003
Hasegawa, M, Watabe, M (1982) Pseudopotential perturbation theory for the surface tension of liquid metals. Journal of Physics C: Solid State Physics, 15 (2). 353-375 doi:10.1088/0022-3719/15/2/018
 
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