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Yan, Binghai, Zhou, Gang, Duan, Wenhui, Wu, Jian, Gu, Bing-Lin (2006) Uniaxial-stress effects on electronic properties of silicon carbide nanowires. Applied Physics Letters, 89 (2). 23104pp. doi:10.1063/1.2221388

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Reference TypeJournal (article/letter/editorial)
TitleUniaxial-stress effects on electronic properties of silicon carbide nanowires
JournalApplied Physics Letters
AuthorsYan, BinghaiAuthor
Zhou, GangAuthor
Duan, WenhuiAuthor
Wu, JianAuthor
Gu, Bing-LinAuthor
Year2006 (July 10)Volume89
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2221388Search in ResearchGate
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Mindat Ref. ID8550720Long-form Identifiermindat:1:5:8550720:3
GUID0
Full ReferenceYan, Binghai, Zhou, Gang, Duan, Wenhui, Wu, Jian, Gu, Bing-Lin (2006) Uniaxial-stress effects on electronic properties of silicon carbide nanowires. Applied Physics Letters, 89 (2). 23104pp. doi:10.1063/1.2221388
Plain TextYan, Binghai, Zhou, Gang, Duan, Wenhui, Wu, Jian, Gu, Bing-Lin (2006) Uniaxial-stress effects on electronic properties of silicon carbide nanowires. Applied Physics Letters, 89 (2). 23104pp. doi:10.1063/1.2221388
In(2006, July) Applied Physics Letters Vol. 89 (2) AIP Publishing

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