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Yamasaki, S., Das, U.K., Yasuda, T. (2002) Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR. Journal of Non-Crystalline Solids, 299. 185-190 doi:10.1016/s0022-3093(01)01160-7

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Reference TypeJournal (article/letter/editorial)
TitleFast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR
JournalJournal of Non-Crystalline Solids
AuthorsYamasaki, S.Author
Das, U.K.Author
Yasuda, T.Author
Year2002 (April)Volume299
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(01)01160-7Search in ResearchGate
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Mindat Ref. ID640329Long-form Identifiermindat:1:5:640329:8
GUID0
Full ReferenceYamasaki, S., Das, U.K., Yasuda, T. (2002) Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR. Journal of Non-Crystalline Solids, 299. 185-190 doi:10.1016/s0022-3093(01)01160-7
Plain TextYamasaki, S., Das, U.K., Yasuda, T. (2002) Fast hydrogen diffusion in hydrogenated amorphous silicon observed by in situ ESR. Journal of Non-Crystalline Solids, 299. 185-190 doi:10.1016/s0022-3093(01)01160-7
In(2002) Journal of Non-Crystalline Solids Vol. 299. Elsevier BV

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Futako, W, Umeda, T, Nishizawa, M, Yasuda, T, Isoya, J, Yamasaki, S (2002) In situ ESR observation of interface dangling bond formation processes during amorphous SiO2 growth on Si. Journal of Non-Crystalline Solids, 299. 575-578 doi:10.1016/s0022-3093(01)00964-4
Beyer, W, Zastrow, U (2002) Helium effusion, diffusion and precipitation as a probe of microstructure in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299. 254-258 doi:10.1016/s0022-3093(01)01004-3
Camargo, S.S, Beyer, W (2002) Microstructural characterization of hard hydrogenated amorphous silicon–carbon alloys. Journal of Non-Crystalline Solids, 299. 885-890 doi:10.1016/s0022-3093(01)00988-7
Yoon, Jong-Hwan, Lee, Kee-Tae (2002) Light-induced effects in hydrogenated amorphous silicon films grown from high hydrogen dilution of silane. Journal of Non-Crystalline Solids, 299. 487-491 doi:10.1016/s0022-3093(01)00958-9
Morigaki, K, Hikita, H (2002) Light-induced defect creation under intense optical excitation in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299. 455-459 doi:10.1016/s0022-3093(01)01018-3
Beyer, W., Zastrow, U. (1998) Solubility and diffusion of hydrogen in hydrogenated crystalline and amorphous silicon. Journal of Non-Crystalline Solids, 227. 880-884 doi:10.1016/s0022-3093(98)00225-7
Srivastava, Alok, Agarwal, P, Agarwal, S.C (2002) Origin of lateral photovoltage in hydrogenated amorphous silicon and silicon germanium thin films. Journal of Non-Crystalline Solids, 299. 430-433 doi:10.1016/s0022-3093(01)01176-0
Rerbal, K, Chazalviel, J.-N, Ozanam, F, Solomon, I (2002) Measurement of band tail widths in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299. 585-588 doi:10.1016/s0022-3093(01)01024-9
Powell, M.J, Wehrspohn, R.B, Deane, S.C (2002) Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 299. 556-560 doi:10.1016/s0022-3093(01)00965-6
Globus, T, Roca i Cabarrocas, P, Gelmont, B (2002) Defect-related absorption in hydrogenated silicon films. Journal of Non-Crystalline Solids, 299. 615-620 doi:10.1016/s0022-3093(01)01206-6
de Lima, M.M, Marques, F.C (2002) On the doping mechanism of boron-doped hydrogenated amorphous silicon deposited by rf-co-sputtering. Journal of Non-Crystalline Solids, 299. 605-609 doi:10.1016/s0022-3093(01)01205-4
 
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