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Kounavis, P., Mytilineou, E. (1996) The defect states in sputtered GeSeBi films. Journal of Non-Crystalline Solids, 201 (1) 119-127 doi:10.1016/0022-3093(96)00140-8

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Reference TypeJournal (article/letter/editorial)
TitleThe defect states in sputtered GeSeBi films
JournalJournal of Non-Crystalline Solids
AuthorsKounavis, P.Author
Mytilineou, E.Author
Year1996 (June)Volume201
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(96)00140-8Search in ResearchGate
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Mindat Ref. ID635658Long-form Identifiermindat:1:5:635658:7
GUID0
Full ReferenceKounavis, P., Mytilineou, E. (1996) The defect states in sputtered GeSeBi films. Journal of Non-Crystalline Solids, 201 (1) 119-127 doi:10.1016/0022-3093(96)00140-8
Plain TextKounavis, P., Mytilineou, E. (1996) The defect states in sputtered GeSeBi films. Journal of Non-Crystalline Solids, 201 (1) 119-127 doi:10.1016/0022-3093(96)00140-8
In(1996, June) Journal of Non-Crystalline Solids Vol. 201 (1) Elsevier BV

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Kounavis, P., Mytilineou, E. (1991) GAP-State distribution in Ge25Se75-xBix sputtered films by phase shift analysis of modulated photocurrents. Journal of Non-Crystalline Solids, 137. 955-958 doi:10.1016/s0022-3093(05)80279-0
Mytilineou, E., Chao, B.S., Papadimitriou, D. (1996) Raman scattering in sputtered amorphous Ge25Se75-xBix films. Journal of Non-Crystalline Solids, 195 (3) 279-285 doi:10.1016/0022-3093(95)00571-4
Kounavis, P, Mytikineou, E (1989) Drift mobility and photoconductivity for P and N-type sputtered Ge25Se75−xBix films. Journal of Non-Crystalline Solids, 114. 103-105 doi:10.1016/0022-3093(89)90082-3
Kounavis, P., Mytilineou, E. (1993) Trapping and recombination processes in amorphous semiconductors studied by the optical bias dependence of the modulated photoconductivity. Journal of Non-Crystalline Solids, 164. 623-626 doi:10.1016/0022-3093(93)90629-c
Kounavis, P., Mytilineou, E. (2002) Formation of a transient disordered state under bias illumination in a-As2Se3. Journal of Non-Crystalline Solids, 299. 940-944 doi:10.1016/s0022-3093(01)01057-2
(1996) Announcement. Journal of Non-Crystalline Solids, 201 (3) 274-276 doi:10.1016/0022-3093(96)80025-1
Kounavis, P. (2003) The interaction of holes with the gap states of a-As 2 Se 3 in annealed and light exposed states. Journal of Non-Crystalline Solids, 326. 98-102 doi:10.1016/s0022-3093(03)00385-5
Singh, A., Davis, E.A., Mytilineou, E., Kay, M. (1996) MuSR simulation of hydrogen centres in amorphous semiconductors — the case of germanium selenide glass. Journal of Non-Crystalline Solids, 198. 692-695 doi:10.1016/0022-3093(96)00008-7
Nagels, P., Tichý, L., Tříska, A., Tichá, H. (1983) Electrical properties of glasses in the GeBiSbSe and GeBiS systems. Journal of Non-Crystalline Solids, 59. 1015-1018 doi:10.1016/0022-3093(83)90339-3
(1996) Editorial Board. Journal of Non-Crystalline Solids, 201 (1) doi:10.1016/s0022-3093(96)90159-3
Yoshida, Norimitsu, Itoh, Mikita, Tanaka, Keiji (1996) Photo- and electron-induced chemical modifications in AgAs(Ge)S(Se) glasses. Journal of Non-Crystalline Solids, 198. 749-752 doi:10.1016/0022-3093(96)00125-1
 
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