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Searle, T.M., Jackson, W.A., Kalbitzer, S. (1989) Photoluminescence studies of ion implantation damage in a-Si:H. Journal of Non-Crystalline Solids, 114. 286-288 doi:10.1016/0022-3093(89)90139-7

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence studies of ion implantation damage in a-Si:H
JournalJournal of Non-Crystalline Solids
AuthorsSearle, T.M.Author
Jackson, W.A.Author
Kalbitzer, S.Author
Year1989 (December)Volume114
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90139-7Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID629151Long-form Identifiermindat:1:5:629151:2
GUID0
Full ReferenceSearle, T.M., Jackson, W.A., Kalbitzer, S. (1989) Photoluminescence studies of ion implantation damage in a-Si:H. Journal of Non-Crystalline Solids, 114. 286-288 doi:10.1016/0022-3093(89)90139-7
Plain TextSearle, T.M., Jackson, W.A., Kalbitzer, S. (1989) Photoluminescence studies of ion implantation damage in a-Si:H. Journal of Non-Crystalline Solids, 114. 286-288 doi:10.1016/0022-3093(89)90139-7
In(1989) Journal of Non-Crystalline Solids Vol. 114. Elsevier BV

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Jackson, W.A., Searle, T.M., Austin, I.G., Gibson, R.A. (1985) Photoluminescence excitation studies of a-SiNx:H alloys. Journal of Non-Crystalline Solids, 77. 909-912 doi:10.1016/0022-3093(85)90808-7
Bhat, P.K., Dunstan, D.J., Austin, I.G., Searle, T.M. (1983) Two beam photoluminescence in a-Si:H. Journal of Non-Crystalline Solids, 59. 349-352 doi:10.1016/0022-3093(83)90592-6
Searle, T.M., Jackson, W.A., Austin, I.G. (1987) Optical properties of amorphous Si:N:H alloys. Journal of Non-Crystalline Solids, 97. 991-998 doi:10.1016/0022-3093(87)90239-0
Galloni, R., Tsuo, Y.S., Baker, D.W., Zignani, F. (1989) Boron doping and hydrogenation by ion implantation of a-Si:H. Journal of Non-Crystalline Solids, 114. 271-273 doi:10.1016/0022-3093(89)90134-8
Winer, K., Street, R.A. (1989) Arsenic incorporation in a-Si:H. Journal of Non-Crystalline Solids, 114. 654-656 doi:10.1016/0022-3093(89)90680-7
Zhou, T.X., Vardeny, Z.V. (1989) Transient photomodulation studies of phosphorus doped a-Si:H. Journal of Non-Crystalline Solids, 114. 292-294 doi:10.1016/0022-3093(89)90141-5
Halpern, V. (1989) Non-radiative recombination at dangling bonds in a-Si:H. Journal of Non-Crystalline Solids, 114. 441-443 doi:10.1016/0022-3093(89)90611-x
Bort, M, Carius, R, Fuhs, W (1989) Lifetime distribution of the photoluminescence of a-Si:H and a-Si1−xCx:H. Journal of Non-Crystalline Solids, 114. 280-282 doi:10.1016/0022-3093(89)90137-3
Hundhausen, Martin (1989) Thermally stimulated conductivity in a-Si:H doping superlattices. Journal of Non-Crystalline Solids, 114. 720-722 doi:10.1016/0022-3093(89)90699-6
Ghivelder, L., Phillips, W.A. (1989) Far infrared absorption in disordered solids. Journal of Non-Crystalline Solids, 109 (2) 280-288 doi:10.1016/0022-3093(89)90041-0
Schumm, G., Bauer, G.H. (1989) Defect structure and stability of a-Si:H by modulated photocurrent studies. Journal of Non-Crystalline Solids, 114. 660-662 doi:10.1016/0022-3093(89)90682-0
 
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