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Vdovin, Vladimir, Zakharov, Nikolai, Pippel, Eckhard, Werner, Peter, Milvidskii, Mikhail, Ries, Mike, Seacrist, Mike, Falster, Robert (2009) Dislocation structure in interfaces between Si wafers with hybrid crystal orientation. physica status solidi (c), 6 (8). 1929-1934 doi:10.1002/pssc.200881431

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Reference TypeJournal (article/letter/editorial)
TitleDislocation structure in interfaces between Si wafers with hybrid crystal orientation
Journalphysica status solidi (c)
AuthorsVdovin, VladimirAuthor
Zakharov, NikolaiAuthor
Pippel, EckhardAuthor
Werner, PeterAuthor
Milvidskii, MikhailAuthor
Ries, MikeAuthor
Seacrist, MikeAuthor
Falster, RobertAuthor
Year2009 (August)Volume6
Issue8
PublisherWiley
DOIdoi:10.1002/pssc.200881431Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5118872Long-form Identifiermindat:1:5:5118872:0
GUID0
Full ReferenceVdovin, Vladimir, Zakharov, Nikolai, Pippel, Eckhard, Werner, Peter, Milvidskii, Mikhail, Ries, Mike, Seacrist, Mike, Falster, Robert (2009) Dislocation structure in interfaces between Si wafers with hybrid crystal orientation. physica status solidi (c), 6 (8). 1929-1934 doi:10.1002/pssc.200881431
Plain TextVdovin, Vladimir, Zakharov, Nikolai, Pippel, Eckhard, Werner, Peter, Milvidskii, Mikhail, Ries, Mike, Seacrist, Mike, Falster, Robert (2009) Dislocation structure in interfaces between Si wafers with hybrid crystal orientation. physica status solidi (c), 6 (8). 1929-1934 doi:10.1002/pssc.200881431
In(2009, August) physica status solidi (c) Vol. 6 (8) Wiley

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Zakharov, N D, Pippel, E, Werner, P, Gösele, U, Vdovin, V, Milvidskii, M, Ries, M, Seacrist, M, Falster, R (2010) Evolution of the interface structure of bonded Si wafers after high temperature annealing. Journal of Physics: Conference Series, 209. 12058pp. doi:10.1088/1742-6596/209/1/012058
Mezhennyi, M. V., Milvidskii, M. G., Reznik, V. Ya., Falster, R. J. (2005) Generation of dislocations in annealed silicon wafers under applied stress. physica status solidi (c), 2 (6). 1968-1972 doi:10.1002/pssc.200460538
Sobolev, Nikolay, Sakharov, Vladimir, Serenkov, Igor, Kalyadin, Anton, Vdovin, Vladimir (2009) Proton backscattering by point and extended defects in ion-implanted Si. physica status solidi (c), 6 (8). 1807-1810 doi:10.1002/pssc.200881463
Steinman, E., Tereshchenko, A., Kononchuk, O., Vdovin, V. (2013) Modification of dislocation PL centres due to misfit of bonded Si wafers. physica status solidi (c), 10 (1). 16-19 doi:10.1002/pssc.201200386
Wagener, Magnus C., Seacrist, Mike, Rozgonyi, George A. (2007) Passivation of hybrid-orientation direct silicon bonded interfaces. Physica B: Condensed Matter, 401. 564-567 doi:10.1016/j.physb.2007.09.022
Voronkov, Vladimir, Falster, Robert (2012) Vacancy out-diffusion in nitrogen-doped silicon. physica status solidi (c), 9 (10). 1987-1991 doi:10.1002/pssc.201200036
Zakharov, N., Pippel, E., Werner, P., Vdovin, V., Gösele, U. (2009) Oxide layer dissolution in Si/SiOx/Si wafer bonded structures. Crystal Research and Technology, 44 (10) 1095-1100 doi:10.1002/crat.200900467
Vdovin, V. I., Torack, T. A., Fei, Lu, Reznik, V. Ya., Mil'vidskii, M. G., Falster, R. (2007) Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers. physica status solidi (c), 4 (8). 3043-3047 doi:10.1002/pssc.200675495
Pichaud, B., Burle, N., Texier, M., Alfonso, C., Gailhanou, M., Thibault-Pénisson, J., Fontaine, C., Vdovin, V. I. (2009) Dislocation nucleation in heteroepitaxial semiconducting films. physica status solidi (c), 6 (8). 1827-1835 doi:10.1002/pssc.200881469
Feklisova, O. V., Yakimov, E. B. (2009) Effect of dislocation trails on gold diffusion in Si. physica status solidi (c), 6 (8). 1823-1826 doi:10.1002/pssc.200881443
Voronkov, Vladimir, Falster, Robert (2016) The nature of boron-oxygen lifetime-degrading centres in silicon. physica status solidi (c), 13 (10). 712-717 doi:10.1002/pssc.201600016
 
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