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Tilak, V., Matocha, K., Dunne, G. (2008) Fabrication and characterization of m-plane (1-100) GaN based metal-oxide-semiconductor capacitors. physica status solidi (c), 5 (6). 2019-2021 doi:10.1002/pssc.200778700

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Reference TypeJournal (article/letter/editorial)
TitleFabrication and characterization of m-plane (1-100) GaN based metal-oxide-semiconductor capacitors
Journalphysica status solidi (c)
AuthorsTilak, V.Author
Matocha, K.Author
Dunne, G.Author
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778700Search in ResearchGate
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Mindat Ref. ID5116476Long-form Identifiermindat:1:5:5116476:6
GUID0
Full ReferenceTilak, V., Matocha, K., Dunne, G. (2008) Fabrication and characterization of m-plane (1-100) GaN based metal-oxide-semiconductor capacitors. physica status solidi (c), 5 (6). 2019-2021 doi:10.1002/pssc.200778700
Plain TextTilak, V., Matocha, K., Dunne, G. (2008) Fabrication and characterization of m-plane (1-100) GaN based metal-oxide-semiconductor capacitors. physica status solidi (c), 5 (6). 2019-2021 doi:10.1002/pssc.200778700
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Tilak, V., Matocha, K., Sandvik, P. (2006) Novel GaN and SiC based gas sensors. physica status solidi (c), 3 (3). 548-553 doi:10.1002/pssc.200564177
Matocha, Kevin, Tilak, Vinayak, Dunne, Greg (2007) Comparison of metal-oxide-semiconductor capacitors on c- and m-plane gallium nitride. Applied Physics Letters, 90 (12). 123511pp. doi:10.1063/1.2716309
Tilak, V., Matocha, K., Sandvik, P. (2005) Pt/GaN Schottky diodes for harsh environment NO sensing applications. physica status solidi (c), 2 (7). 2555-2558 doi:10.1002/pssc.200461587
Yu, Hongbo, Jung, Taeil, Ku, P. C. (2008) Fabrication and optical properties of nano-structured semipolar InGaN/GaN quantum wells on c-plane GaN template. physica status solidi (c), 5 (6). 1618-1620 doi:10.1002/pssc.200778541
Huang, W., Khan, T., Chow, T. P. (2008) Optimization of GaN MOS capacitors and FETs. physica status solidi (c), 5 (6). 2016-2018 doi:10.1002/pssc.200778694
Jindal, Vibhu, Grandusky, James, Jamil, Muhammad, Irissou, Eric, Shahedipour Sandvik, Fatemeh, Matocha, Kevin, Tilak, Vinayak (2006) Development of pit-defect free smooth a-plane GaN surfaces on r-plane sapphire using metalorganic chemical vapor deposition: A growth mechanism study. physica status solidi (c), 3 (6). 1792-1797 doi:10.1002/pssc.200565343
Aschenbrenner, T., Goepel, K., Kruse, C., Figge, S., Hommel, D. (2008) Direct MOVPE- and MBE-growth of a-plane GaN on r-plane sapphire. physica status solidi (c), 5 (6). 1836-1838 doi:10.1002/pssc.200778690
Arai, M., Sugimoto, K., Egawa, S., Honda, T. (2008) Fabrication of GaN-based UV TF-ELDs by CS-MBE technique and their application to RGB light-emitting pixels. physica status solidi (c), 5 (6). 2176-2178 doi:10.1002/pssc.200778522
Wernicke, Tim, Netzel, Carsten, Weyers, Markus, Kneissl, Michael (2008) Semipolar GaN grown on m-plane sapphire using MOVPE. physica status solidi (c), 5 (6). 1815-1817 doi:10.1002/pssc.200778670
Tilak, V., Vertiatchikh, A., Jiang, J., Reeves, N., Dasgupta, S. (2006) Piezoresistive and piezoelectric effects in GaN. physica status solidi (c), 3 (6). 2307-2311 doi:10.1002/pssc.200565217
Lui, H. F., Fong, W. K., Surya, C., Cheung, C. H., Djurišić, A. B. (2006) Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors. physica status solidi (c), 3 (6). 2295-2298 doi:10.1002/pssc.200565358
 
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