Kang, B. S., Mehandru, R., Kim, S., Ren, F., Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Baik, K. H., Gila, B. P., Abernathy, C. R., Pearton, S. J. (2005) Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors. physica status solidi (c), 2 (7). 2672-2675 doi:10.1002/pssc.200461268

See Also

These are possibly similar items as determined by title/reference text matching only.

	Kang, B. S., Mehandru, R., Kim, S., Ren, F., Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Gila, B. P., Abernathy, C. R., Pearton, S. J. (2004) Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 84 (23). 4635-4637 doi:10.1063/1.1759372
	Wang, Hung-Ta, Kang, B. S., Ren, F., Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Gila, B. P., Abernathy, C. R., Pearton, S. J. (2005) Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 87 (17). 172105pp. doi:10.1063/1.2117617
	Luo, B., Kim, Jihyun, Ren, F., Gillespie, J. K., Fitch, R. C., Sewell, J., Dettmer, R., Via, G. D., Crespo, A., Jenkins, T. J., Gila, B. P., Onstine, A. H., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dwivedi, R., Fogarty, T. N., Wilkins, R. (2003) Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 82 (9). 1428-1430 doi:10.1063/1.1559631
	Kang, B. S., Kim, S., Kim, J., Mehandru, R., Ren, F., Baik, K., Pearton, S. J., Gila, B. P., Abernathy, C. R., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Chandrasekaran, V., Sheplak, M., Nishida, T., Chu, S. N. G. (2005) AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing. physica status solidi (c), 2 (7). 2684-2687 doi:10.1002/pssc.200461269
	Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A. (2003) AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation. Applied Physics Letters, 82 (15). 2530-2532 doi:10.1063/1.1567051
	Moser, N. A., Gillespie, J. K., Via, G. D., Crespo, A., Yannuzzi, M. J., Jessen, G. H., Fitch, R. C., Luo, B., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J. (2003) Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 83 (20). 4178-4180 doi:10.1063/1.1628394
	Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., Irokawa, Y. (2002) Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors. Journal of the Electrochemical Society, 149. doi:10.1149/1.1512675
	Moser, N., Fitch, R. C., Crespo, A., Gillespie, J. K., Jessen, G. H., Via, G. D., Luo, B., Ren, F., Gila, B. P., Abernathy, C. R., Pearton, S. J. (2004) Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics after UV-Ozone Pretreatment. Journal of the Electrochemical Society, 151. doi:10.1149/1.1803561
	Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C., Han, J. (2002) Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 80 (9). 1661-1663 doi:10.1063/1.1455692
	Fitch, R. C., Gillespie, J. K., Moser, N., Jenkins, T., Sewell, J., Via, D., Crespo, A., Dabiran, A. M., Chow, P. P., Osinsky, A., La Roche, J. R., Ren, F., Pearton, S. J. (2004) Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 84 (9). 1495-1497 doi:10.1063/1.1651649
	Gila, B. P., Hlad, M., Onstine, A. H., Frazier, R., Thaler, G. T., Herrero, A., Lambers, E., Abernathy, C. R., Pearton, S. J., Anderson, T., Jang, S., Ren, F., Moser, N., Fitch, R. C., Freund, M. (2005) Improved oxide passivation of AlGaN∕GaN high electron mobility transistors. Applied Physics Letters, 87 (16). 163503pp. doi:10.1063/1.2105987