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O'Brien, P., Walsh, J.R., Watson, I.M., Hart, L., Silva, S.R.P. (1996) Properties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors. Journal of Crystal Growth, 167 (1). 133-142 doi:10.1016/0022-0248(96)00225-4

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Reference TypeJournal (article/letter/editorial)
TitleProperties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors
JournalJournal of Crystal Growth
AuthorsO'Brien, P.Author
Walsh, J.R.Author
Watson, I.M.Author
Hart, L.Author
Silva, S.R.P.Author
Year1996 (September)Volume167
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(96)00225-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2829777Long-form Identifiermindat:1:5:2829777:4
GUID0
Full ReferenceO'Brien, P., Walsh, J.R., Watson, I.M., Hart, L., Silva, S.R.P. (1996) Properties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors. Journal of Crystal Growth, 167 (1). 133-142 doi:10.1016/0022-0248(96)00225-4
Plain TextO'Brien, P., Walsh, J.R., Watson, I.M., Hart, L., Silva, S.R.P. (1996) Properties of cadmium sulphide films grown by single-source metalorganic chemical vapour deposition with dithiocarbamate precursors. Journal of Crystal Growth, 167 (1). 133-142 doi:10.1016/0022-0248(96)00225-4
In(1996, September) Journal of Crystal Growth Vol. 167 (1) Elsevier BV

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Frigo, Dario M., Khan, Omar F.Z., O'Brien, Paul (1989) Growth of epitaxial and highly oriented thin films of cadmium and cadmium zinc sulfide by low-pressure metalorganic chemical vapour deposition using diethyldithiocarbamates. Journal of Crystal Growth, 96 (4). 989-992 doi:10.1016/0022-0248(89)90662-3
Yates, H.M., Williams, J.O. (1991) Purity of zinc precursors and the properties of epitaxial ZnSe grown by atmospheric pressure metalorganic chemical vapour deposition. Journal of Crystal Growth, 107 (1). 386-389 doi:10.1016/0022-0248(91)90491-m
O'Brien, Paul, Saeed, Tahir (1996) Deposition and characterization of cadmium sulfide thin films by chemical bath deposition. Journal of Crystal Growth, 158 (4). 497-504 doi:10.1016/0022-0248(95)00467-x
Jones, A.C., Rushworth, S.A., Auld, J. (1995) Recent developments in metalorganic precursors for metalorganic chemical vapour deposition. Journal of Crystal Growth, 146 (1). 503-510 doi:10.1016/0022-0248(94)00469-2
Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J. (1997) Study of GaN and InGaN films grown by metalorganic chemical vapour deposition. Journal of Crystal Growth, 170 (1). 344-348 doi:10.1016/s0022-0248(96)00595-7
Kobayashi, Takashi, Kurishima, Kenji, Ishibashi, Tadao (1994) Beryllium-doped InGaAs grown by low-pressure metalorganic chemical vapor deposition. Journal of Crystal Growth, 142 (1). 1-4 doi:10.1016/0022-0248(94)90262-3
Dupuis, R.D., Campbell, J.C., Velebir, J.R. (1986) InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 77 (1). 598-605 doi:10.1016/0022-0248(86)90357-x
Ito, Hiroshi, Kurishima, Kenji (1996) Influence of gallium sources on carbon incorporation efficiency into InGaAs grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 165 (3). 215-221 doi:10.1016/0022-0248(96)00174-1
Bongers, M.M.G., Li, Y., te Nijenhuis, J., Giling, L.J. (1996) Structural analysis of InxGa1 − xAs grown on Ge by low pressure metalorganic chemical vapour deposition. Journal of Crystal Growth, 162 (1). 7-14 doi:10.1016/0022-0248(95)00944-2
Talla, K., Dangbégnon, J.K., Wagener, M.C., Weber, J., Botha, J.R. (2011) Effect of growth parameters on MgxZn1−xO films grown by metalorganic chemical vapour deposition. Journal of Crystal Growth, 315 (1). 297-300 doi:10.1016/j.jcrysgro.2010.08.001
Thomas, B., Höpfner, C., Ellmer, K., Fiechter, S., Tributsch, H. (1995) Growth of FeS2 (pyrite) thin films on single crystalline substrates by low pressure metalorganic chemical vapour deposition. Journal of Crystal Growth, 146 (1). 630-635 doi:10.1016/0022-0248(94)00528-1
 
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